STFW3N150

STFW3N150

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Description

Parameters

ParameterSTFW3N150
IC package
Package
TO-3PF
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<83 W
Input capacitance of field effect transistor
Ciss
939 pFVds = 25V
Continuous drain current
IDSS
<2.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<9 ΩId, Vgs = 1.3A, 10V
MOSFET series
Series
PowerMESH™
Gate charge
QG
29.3 nCVgs = 10V
FET Feature
FET Feature
Standard