STF6NM60N

STF6NM60, STF6NM60N

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Description

Parameters

ParameterSTF6NM60N
IC package
Package
TO-220FP
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<20 W
Input capacitance of field effect transistor
Ciss
420 pFVds = 50V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<4.6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<920 mΩId, Vgs = 2.3A, 10V
MOSFET series
Series
MDmesh™
Gate charge
QG
13 nCVgs = 10V
FET Feature
FET Feature
Standard