STF30NM50N

STF30NM50, STF30NM50N

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Description

Parameters

ParameterSTF30NM50N
IC package
Package
TO-220FP
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<40 W
Input capacitance of field effect transistor
Ciss
2.74 nFVds = 50V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<27 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<115 mΩId, Vgs = 13.5A, 10V
MOSFET series
Series
MDmesh™
Gate charge
QG
94 nCVgs = 10V
FET Feature
FET Feature
Standard