STF14NM65

STF14NM65, STF14NM65N

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterSTF14NM65N
IC package
Package
TO-220FP
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<30 W
Input capacitance of field effect transistor
Ciss
1.3 nFVds = 50V
Continuous voltage between drain and source
UDSS
<650 V
Continuous drain current
IDSS
<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<380 mΩId, Vgs = 6A, 10V
MOSFET series
Series
MDmesh™
Gate charge
QG
45 nCVgs = 10V
FET Feature
FET Feature
Standard