STE70NM50

STE70NM50

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Description

Parameters

ParameterSTE70NM50
IC package
Package
ISOTOP
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<600 W
Input capacitance of field effect transistor
Ciss
7.5 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<70 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<50 mΩId, Vgs = 30A, 10V
MOSFET series
Series
MDmesh™
Gate charge
QG
266 nCVgs = 10V
FET Feature
FET Feature
Standard