STE53NC50

STE53NC50

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Description

Parameters

ParameterSTE53NC50
IC package
Package
ISOTOP
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<460 W
Input capacitance of field effect transistor
Ciss
11.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<53 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<80 mΩId, Vgs = 27A, 10V
MOSFET series
Series
PowerMESH™
Gate charge
QG
434 nCVgs = 10V
FET Feature
FET Feature
Standard