STE30NK90Z

STE30NK90, STE30NK90Z

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Description

Parameters

ParameterSTE30NK90Z
IC package
Package
ISOTOP
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<500 W
Input capacitance of field effect transistor
Ciss
12 nFVds = 25V
Continuous voltage between drain and source
UDSS
<900 V
Continuous drain current
IDSS
<28 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<260 mΩId, Vgs = 14A, 10V
MOSFET series
Series
SuperMESH™
Gate charge
QG
490 nCVgs = 10V
FET Feature
FET Feature
Standard