STE26NA90

STE26NA90

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Description

Parameters

ParameterSTE26NA90
IC package
Package
ISOTOP
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<450 W
Input capacitance of field effect transistor
Ciss
1.77 nFVds = 25V
Continuous voltage between drain and source
UDSS
<900 V
Continuous drain current
IDSS
<26 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<300 mΩId, Vgs = 13A, 10V
Gate charge
QG
660 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate