STE110NS20FD

STE110NS20, STE110NS20FD

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Description

Parameters

ParameterSTE110NS20FD
IC package
Package
ISOTOP
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<500 W
Input capacitance of field effect transistor
Ciss
7.9 nFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<110 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<24 mΩId, Vgs = 50A, 10V
MOSFET series
Series
MESH OVERLAY™
Gate charge
QG
504 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate