STD8NM60N-1

STD8NM60, STD8NM60N, STD8NM60N-1, STD8NM60ND

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Description

Parameters

ParameterSTD8NM60NSTD8NM60N-1STD8NM60ND
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mountThrough-holeSurface mount
Power dissipation
P
<70 W
Input capacitance of field effect transistor
Ciss
560 pFVds = 50V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<650 mΩId, Vgs = 3.5A, 10V<650 mΩId, Vgs = 3.5A, 10V<700 mΩId, Vgs = 3.5A, 10V
MOSFET series
Series
MDmesh™MDmesh™FDmesh™
Gate charge
QG
19 nCVgs = 10V19 nCVgs = 10V22 nCVgs = 10V
FET Feature
FET Feature
Standard