STD12NM50N

STD12NM50, STD12NM50N, STD12NM50ND

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Description

Parameters

ParameterSTD12NM50NSTD12NM50ND
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<100 W
Input capacitance of field effect transistor
Ciss
940 pFVds = 50V850 pFVds = 50V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<11 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<380 mΩId, Vgs = 5.5A, 10V
MOSFET series
Series
MDmesh™FDmesh™
Gate charge
QG
30 nCVgs = 10V
FET Feature
FET Feature
Standard