STD11NM60

STD11NM60, STD11NM60N, STD11NM60N-1, STD11NM60ND

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterSTD11NM60NSTD11NM60N-1STD11NM60ND
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mountThrough-holeSurface mount
Power dissipation
P
<90 W
Input capacitance of field effect transistor
Ciss
850 pFVds = 50V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<10 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<450 mΩId, Vgs = 5A, 10V
MOSFET series
Series
MDmesh™MDmesh™FDmesh™
Gate charge
QG
31 nCVgs = 10V31 nCVgs = 10V30 nCVgs = 10V
FET Feature
FET Feature
Standard