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| Parameter | STD10NM65N | |
|---|---|---|
IC package | Package | DPak, TO-252 (2 leads+tab), SC-63 |
Manufacturer | Manufacturer | STMicroelectronics |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <90 W |
Input capacitance of field effect transistor | Ciss | 850 pFVds = 50V |
Continuous voltage between drain and source | UDSS | <650 V |
Continuous drain current | IDSS | <9 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <480 mΩId, Vgs = 4.5A, 10V |
MOSFET series | Series | MDmesh™ |
Gate charge | QG | 25 nCVgs = 10V |
FET Feature | FET Feature | Standard |