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| Parameter | STB8NM60D | STB8NM60N | STB8NM60T4 | |
|---|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | ||
Manufacturer | Manufacturer | STMicroelectronics | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <100 W | <70 W | <100 W |
Input capacitance of field effect transistor | Ciss | 380 pFVds = 25V | 560 pFVds = 50V | 400 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <600 V | <600 V | <650 V |
Continuous drain current | IDSS | <8 A | <7 A | <8 A |
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <1 ΩId, Vgs = 2.5A, 10V | <650 mΩId, Vgs = 3.5A, 10V | <1 ΩId, Vgs = 2.5A, 10V |
MOSFET series | Series | MDmesh™ | ||
Gate charge | QG | 18 nCVgs = 10V | 19 nCVgs = 10V | 18 nCVgs = 10V |
FET Feature | FET Feature | Standard | ||