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| Parameter | STB80NF55-06-1 | STB80NF55-06T4 | STB80NF55-08-1 | STB80NF55-08T4 | STB80NF55L-06T4 | STB80NF55L-08-1 | |
|---|---|---|---|---|---|---|---|
IC package | Package | I²Pak, TO-262 (3 straight leads + tab) | D²Pak, TO-263 (2 leads + tab) | I²Pak, TO-262 (3 straight leads + tab) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) | I²Pak, TO-262 (3 straight leads + tab) |
Manufacturer | Manufacturer | STMicroelectronics | |||||
Type of mounting a component on a board/circuit | Mount | Through-hole | Surface mount | Through-hole | Surface mount | Surface mount | Through-hole |
Power dissipation | P | <300 W | |||||
Input capacitance of field effect transistor | Ciss | 4.4 nFVds = 25V | 4.4 nFVds = 25V | 3.85 nFVds = 25V | 3.85 nFVds = 25V | 4.85 nFVds = 25V | 4.35 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <55 V | |||||
Continuous drain current | IDSS | <80 A | |||||
FET channel type | Channel | N-ch | |||||
Channel resistance at ON state | RDS-ON | <6.5 mΩId, Vgs = 40A, 10V | <6.5 mΩId, Vgs = 40A, 10V | <8 mΩId, Vgs = 40A, 10V | <8 mΩId, Vgs = 40A, 10V | <6.5 mΩId, Vgs = 40A, 10V | <8 mΩId, Vgs = 40A, 10V |
MOSFET series | Series | STripFET™ | |||||
Gate charge | QG | 189 nCVgs = 10V | 189 nCVgs = 10V | 155 nCVgs = 10V | 155 nCVgs = 10V | 136 nCVgs = 5V | 100 nCVgs = 4.5V |
FET Feature | FET Feature | Standard | Standard | Standard | Standard | Logic Level Gate | Standard |