STB6NK60Z-1

STB6NK60, STB6NK60Z-1, STB6NK60ZT4

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Description

Parameters

ParameterSTB6NK60Z-1STB6NK60ZT4
IC package
Package
I²Pak, TO-262 (3 straight leads + tab)D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mount
Power dissipation
P
<110 W
Input capacitance of field effect transistor
Ciss
905 pFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.2 ΩId, Vgs = 3A, 10V
MOSFET series
Series
SuperMESH™
Gate charge
QG
46 nCVgs = 10V
FET Feature
FET Feature
Standard