STB30NM60N

STB30NM60, STB30NM60N, STB30NM60ND

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Description

Parameters

ParameterSTB30NM60NSTB30NM60ND
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<190 W
Input capacitance of field effect transistor
Ciss
2.7 nFVds = 50V2.8 nFVds = 50V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<25 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<130 mΩId, Vgs = 12.5A, 10V
MOSFET series
Series
MDmesh™FDmesh™
Gate charge
QG
91 nCVgs = 10V100 nCVgs = 10V
FET Feature
FET Feature
Standard