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| Parameter | STB21NM60N | STB21NM60N-1 | STB21NM60ND | |
|---|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | I²Pak, TO-262 (3 straight leads + tab) | D²Pak, TO-263 (2 leads + tab) |
Manufacturer | Manufacturer | STMicroelectronics | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | Through-hole | Surface mount |
Power dissipation | P | <140 W | ||
Input capacitance of field effect transistor | Ciss | 1.9 nFVds = 50V | 1.9 nFVds = 50V | 1.8 nFVds = 50V |
Continuous voltage between drain and source | UDSS | <600 V | ||
Continuous drain current | IDSS | <17 A | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <220 mΩId, Vgs = 8.5A, 10V | ||
MOSFET series | Series | MDmesh™ | MDmesh™ | FDmesh™ |
Gate charge | QG | 66 nCVgs = 10V | 66 nCVgs = 10V | 60 nCVgs = 10V |
FET Feature | FET Feature | Standard | ||