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| Parameter | STB21NM50N | STB21NM50N-1 | |
|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | I²Pak, TO-262 (3 straight leads + tab) |
Manufacturer | Manufacturer | STMicroelectronics | |
Type of mounting a component on a board/circuit | Mount | Surface mount | Through-hole |
Power dissipation | P | <140 W | |
Input capacitance of field effect transistor | Ciss | 1.95 nFVds = 25V | |
Continuous voltage between drain and source | UDSS | <500 V | |
Continuous drain current | IDSS | <18 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <190 mΩId, Vgs = 9A, 10V | |
MOSFET series | Series | MDmesh™ | |
Gate charge | QG | 65 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |