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| Parameter | STB18NM80 | |
|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) |
Manufacturer | Manufacturer | STMicroelectronics |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <190 W |
Input capacitance of field effect transistor | Ciss | 2.07 nFVds = 50V |
Continuous voltage between drain and source | UDSS | <800 V |
Continuous drain current | IDSS | <17 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <295 mΩId, Vgs = 8.5A, 10V |
MOSFET series | Series | MDmesh™ |
Gate charge | QG | 70 nCVgs = 10V |
FET Feature | FET Feature | Standard |