STB16NS25T4

STB16NS25, STB16NS25T4

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterSTB16NS25T4
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<140 W
Input capacitance of field effect transistor
Ciss
1.27 nFVds = 25V
Continuous voltage between drain and source
UDSS
<250 V
Continuous drain current
IDSS
<16 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<280 mΩId, Vgs = 8A, 10V
MOSFET series
Series
MESH OVERLAY™
Gate charge
QG
80 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate