STB16NK65

STB16NK65, STB16NK65Z-S

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Description

Parameters

ParameterSTB16NK65Z-S
IC package
Package
I²Pak, TO-262 (3 straight leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<190 W
Input capacitance of field effect transistor
Ciss
2.75 nFVds = 25V
Continuous voltage between drain and source
UDSS
<650 V
Continuous drain current
IDSS
<13 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<500 mΩId, Vgs = 6.5A, 10V
MOSFET series
Series
SuperMESH™
Gate charge
QG
89 nCVgs = 10V
FET Feature
FET Feature
Standard