STB15NM60N

STB15NM60, STB15NM60N, STB15NM60ND

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Description

Parameters

ParameterSTB15NM60NSTB15NM60ND
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<125 W
Input capacitance of field effect transistor
Ciss
1.25 nFVds = 50V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<14 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<299 mΩId, Vgs = 7A, 10V
MOSFET series
Series
MDmesh™FDmesh™
Gate charge
QG
37 nCVgs = 10V40 nCVgs = 10V
FET Feature
FET Feature
Standard