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| Parameter | STB13NM50N | STB13NM50N-1 | |
|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | I²Pak, TO-262 (3 straight leads + tab) |
Manufacturer | Manufacturer | STMicroelectronics | |
Type of mounting a component on a board/circuit | Mount | Surface mount | Through-hole |
Power dissipation | P | <100 W | |
Input capacitance of field effect transistor | Ciss | 960 pFVds = 50V | |
Continuous voltage between drain and source | UDSS | <500 V | |
Continuous drain current | IDSS | <12 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <320 mΩId, Vgs = 6A, 10V | |
MOSFET series | Series | MDmesh™ | |
Gate charge | QG | 30 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |