STB12NM50N

STB12NM50, STB12NM50FDT4, STB12NM50N, STB12NM50ND, STB12NM50T4

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Description

Parameters

ParameterSTB12NM50FDT4STB12NM50NSTB12NM50NDSTB12NM50T4
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<160 W<100 W<100 W<160 W
Input capacitance of field effect transistor
Ciss
1 nFVds = 25V940 pFVds = 50V850 pFVds = 50V1 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V<500 V<500 V<550 V
Continuous drain current
IDSS
<12 A<11 A<11 A<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<400 mΩId, Vgs = 6A, 10V<380 mΩId, Vgs = 5.5A, 10V<380 mΩId, Vgs = 5.5A, 10V<350 mΩId, Vgs = 6A, 10V
MOSFET series
Series
FDmesh™MDmesh™FDmesh™MDmesh™
Gate charge
QG
12 nCVgs = 10V30 nCVgs = 10V30 nCVgs = 10V39 nCVgs = 10V
FET Feature
FET Feature
Standard