STB11NM60FDT4

STB11NM60, STB11NM60-1, STB11NM60FDT4, STB11NM60N-1, STB11NM60T4

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterSTB11NM60-1STB11NM60FDT4STB11NM60N-1STB11NM60T4
IC package
Package
I²Pak, TO-262 (3 straight leads + tab)D²Pak, TO-263 (2 leads + tab)I²Pak, TO-262 (3 straight leads + tab)D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountThrough-holeSurface mount
Power dissipation
P
<160 W<160 W<90 W<160 W
Input capacitance of field effect transistor
Ciss
1 nFVds = 25V900 pFVds = 25V850 pFVds = 50V1 nFVds = 25V
Continuous voltage between drain and source
UDSS
<650 V<600 V<600 V<650 V
Continuous drain current
IDSS
<11 A<11 A<10 A<11 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<450 mΩId, Vgs = 5.5A, 10V<450 mΩId, Vgs = 5.5A, 10V<450 mΩId, Vgs = 5A, 10V<450 mΩId, Vgs = 5.5A, 10V
MOSFET series
Series
MDmesh™FDmesh™MDmesh™MDmesh™
Gate charge
QG
30 nCVgs = 10V40 nCVgs = 10V31 nCVgs = 10V30 nCVgs = 10V
FET Feature
FET Feature
Standard