STB10NK60ZT4

STB10NK60, STB10NK60Z-1, STB10NK60ZT4

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Description

Parameters

ParameterSTB10NK60Z-1STB10NK60ZT4
IC package
Package
I²Pak, TO-262 (3 straight leads + tab)D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mount
Power dissipation
P
<115 W
Input capacitance of field effect transistor
Ciss
1.37 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<10 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<750 mΩId, Vgs = 4.5A, 10V
MOSFET series
Series
SuperMESH™
Gate charge
QG
70 nCVgs = 10V
FET Feature
FET Feature
Standard