STB100NH02

STB100NH02, STB100NH02LT4

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Description

Parameters

ParameterSTB100NH02LT4
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<100 W
Input capacitance of field effect transistor
Ciss
2.85 nFVds = 15V
Continuous voltage between drain and source
UDSS
<24 V
Continuous drain current
IDSS
<60 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<6 mΩId, Vgs = 30A, 10V
MOSFET series
Series
STripFET™
Gate charge
QG
64 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate