SSN1N45BTA

SSN1N45, SSN1N45BBU, SSN1N45BTA

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Description

Parameters

ParameterSSN1N45BBUSSN1N45BTA
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<900 mW
Input capacitance of field effect transistor
Ciss
240 pFVds = 25V
Continuous voltage between drain and source
UDSS
<450 V
Continuous drain current
IDSS
<500 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<4.25 ΩId, Vgs = 250mA, 10V
Gate charge
QG
8.5 nCVgs = 10V
FET Feature
FET Feature
Standard