SPP80P06PG

SPP80P06, SPP80P06P, SPP80P06PG

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Description

Parameters

ParameterSPP80P06PSPP80P06PG
IC package
Package
TO-220ABTO-220-3
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<340 W
Input capacitance of field effect transistor
Ciss
5.033 nFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<80 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<23 mΩId, Vgs = 64A, 10V
MOSFET series
Series
SIPMOS®
Gate charge
QG
173 nCVgs = 10V
FET Feature
FET Feature
Standard