SPP80N03

SPP80N03, SPP80N03S2-03, SPP80N03S2L-03, SPP80N03S2L-04, SPP80N03S2L-05, SPP80N03S2L-06

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Description

Parameters

Parameter		SPP80N03S2-03	SPP80N03S2L-03	SPP80N03S2L-04	SPP80N03S2L-05	SPP80N03S2L-06
IC package	Package	TO-220	TO-220	TO-220	TO-220AB	TO-220AB
Manufacturer	Manufacturer	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Through-hole
Power dissipation	P	<300 W	<300 W	<188 W	<167 W	<150 W
Input capacitance of field effect transistor	C_iss	7.02 nFVds = 25V	8.18 nFVds = 25V	3.9 nFVds = 25V	3.32 nFVds = 25V	2.53 nFVds = 25V
Continuous voltage between drain and source	U_DSS	<30 V
Continuous drain current	I_DSS	<80 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<3.4 mΩId, Vgs = 80A, 10V	<3.1 mΩId, Vgs = 80A, 10V	<4.2 mΩId, Vgs = 80A, 10V	<5.2 mΩId, Vgs = 55A, 10V	<6.2 mΩId, Vgs = 80A, 10V
MOSFET series	Series	OptiMOS™
Gate charge	Q_G	150 nCVgs = 10V	220 nCVgs = 10V	105 nCVgs = 10V	89.7 nCVgs = 10V	68 nCVgs = 10V
FET Feature	FET Feature	Standard	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate