SPP21N50

SPP21N50, SPP21N50C3

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Description

Parameters

ParameterSPP21N50C3
IC package
Package
TO-220AB
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<208 W
Input capacitance of field effect transistor
Ciss
2.4 nFVds = 25V
Continuous voltage between drain and source
UDSS
<560 V
Continuous drain current
IDSS
<21 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<190 mΩId, Vgs = 13.1A, 10V
MOSFET series
Series
CoolMOS™
Gate charge
QG
95 nCVgs = 10V
FET Feature
FET Feature
Standard