SPP100N03S2-03

SPP100N03, SPP100N03S2-03, SPP100N03S2L03

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Description

Parameters

ParameterSPP100N03S2-03SPP100N03S2L03
IC package
Package
TO-220AB
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<300 W
Input capacitance of field effect transistor
Ciss
7.02 nFVds = 25V8.18 nFVds = 25V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<100 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<3.3 mΩId, Vgs = 80A, 10V<3 mΩId, Vgs = 80A, 10V
MOSFET series
Series
OptiMOS™
Gate charge
QG
150 nCVgs = 10V220 nCVgs = 10V
FET Feature
FET Feature
StandardLogic Level Gate