SPB80N06S2-05

SPB80N06, SPB80N06S-08, SPB80N06S2-05, SPB80N06S2-07, SPB80N06S2-08, SPB80N06S2-09, SPB80N06S2-H5, SPB80N06S2L-05, SPB80N06S2L-06, SPB80N06S2L-07, SPB80N06S2L-09, SPB80N06S2L-11, SPB80N06S2L-H5

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Description

Parameters

ParameterSPB80N06S-08SPB80N06S2-05SPB80N06S2-07SPB80N06S2-08SPB80N06S2-09SPB80N06S2-H5SPB80N06S2L-05SPB80N06S2L-06SPB80N06S2L-07SPB80N06S2L-09SPB80N06S2L-11SPB80N06S2L-H5
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<300 W<300 W<250 W<215 W<190 W<300 W<300 W<250 W<210 W<190 W<158 W<300 W
Input capacitance of field effect transistor
Ciss
3.66 nFVds = 25V6.79 nFVds = 25V4.54 nFVds = 25V3.8 nFVds = 25V3.14 nFVds = 25V5.5 nFVds = 25V7.53 nFVds = 25V5.05 nFVds = 25V4.21 nFVds = 25V3.48 nFVds = 25V2.65 nFVds = 25V6.64 nFVds = 25V
Continuous voltage between drain and source
UDSS
<55 V
Continuous drain current
IDSS
<80 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<7.7 mΩId, Vgs = 80A, 10V<4.8 mΩId, Vgs = 80A, 10V<6.6 mΩId, Vgs = 68A, 10v<8 mΩId, Vgs = 58A, 10V<9.1 mΩId, Vgs = 50A, 10V<5.5 mΩId, Vgs = 80A, 10V<4.5 mΩId, Vgs = 80A, 10V<6.3 mΩId, Vgs = 69A, 10V<7 mΩId, Vgs = 60A, 10V<8.5 mΩId, Vgs = 52A, 10V<11 mΩId, Vgs = 40A, 10V<5 mΩId, Vgs = 80A, 10V
MOSFET series
Series
SIPMOS®OptiMOS™OptiMOS™OptiMOS™OptiMOS™OptiMOS™OptiMOS™OptiMOS™OptiMOS™OptiMOS™OptiMOS™OptiMOS™
Gate charge
QG
187 nCVgs = 10V170 nCVgs = 10V110 nCVgs = 10V96 nCVgs = 10V80 nCVgs = 10V155 nCVgs = 10V230 nCVgs = 10V150 nCVgs = 10V130 nCVgs = 10V105 nCVgs = 10V80 nCVgs = 10V190 nCVgs = 10V
FET Feature
FET Feature
StandardStandardStandardStandardStandardStandardLogic Level GateLogic Level GateLogic Level GateLogic Level GateLogic Level GateLogic Level Gate