SPB80N06S-08

SPB80N06, SPB80N06S-08, SPB80N06S2-05, SPB80N06S2-07, SPB80N06S2-08, SPB80N06S2-09, SPB80N06S2-H5, SPB80N06S2L-05, SPB80N06S2L-06, SPB80N06S2L-07, SPB80N06S2L-09, SPB80N06S2L-11, SPB80N06S2L-H5

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Description

Parameters

Parameter		SPB80N06S-08	SPB80N06S2-05	SPB80N06S2-07	SPB80N06S2-08	SPB80N06S2-09	SPB80N06S2-H5	SPB80N06S2L-05	SPB80N06S2L-06	SPB80N06S2L-07	SPB80N06S2L-09	SPB80N06S2L-11	SPB80N06S2L-H5
IC package	Package	D²Pak, TO-263 (2 leads + tab)
Manufacturer	Manufacturer	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<300 W	<300 W	<250 W	<215 W	<190 W	<300 W	<300 W	<250 W	<210 W	<190 W	<158 W	<300 W
Input capacitance of field effect transistor	C_iss	3.66 nFVds = 25V	6.79 nFVds = 25V	4.54 nFVds = 25V	3.8 nFVds = 25V	3.14 nFVds = 25V	5.5 nFVds = 25V	7.53 nFVds = 25V	5.05 nFVds = 25V	4.21 nFVds = 25V	3.48 nFVds = 25V	2.65 nFVds = 25V	6.64 nFVds = 25V
Continuous voltage between drain and source	U_DSS	<55 V
Continuous drain current	I_DSS	<80 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<7.7 mΩId, Vgs = 80A, 10V	<4.8 mΩId, Vgs = 80A, 10V	<6.6 mΩId, Vgs = 68A, 10v	<8 mΩId, Vgs = 58A, 10V	<9.1 mΩId, Vgs = 50A, 10V	<5.5 mΩId, Vgs = 80A, 10V	<4.5 mΩId, Vgs = 80A, 10V	<6.3 mΩId, Vgs = 69A, 10V	<7 mΩId, Vgs = 60A, 10V	<8.5 mΩId, Vgs = 52A, 10V	<11 mΩId, Vgs = 40A, 10V	<5 mΩId, Vgs = 80A, 10V
MOSFET series	Series	SIPMOS®	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™
Gate charge	Q_G	187 nCVgs = 10V	170 nCVgs = 10V	110 nCVgs = 10V	96 nCVgs = 10V	80 nCVgs = 10V	155 nCVgs = 10V	230 nCVgs = 10V	150 nCVgs = 10V	130 nCVgs = 10V	105 nCVgs = 10V	80 nCVgs = 10V	190 nCVgs = 10V
FET Feature	FET Feature	Standard	Standard	Standard	Standard	Standard	Standard	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate