SPB80N03S2-03

SPB80N03, SPB80N03S2-03, SPB80N03S2-03G, SPB80N03S2L-03, SPB80N03S2L-03G, SPB80N03S2L-04, SPB80N03S2L-04G, SPB80N03S2L-05, SPB80N03S2L-05G, SPB80N03S2L05T, SPB80N03S2L-06, SPB80N03S2L-06G, SPB80N03S2L06T

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Description

Parameters

ParameterSPB80N03S2-03SPB80N03S2-03GSPB80N03S2L-03SPB80N03S2L-03GSPB80N03S2L-04SPB80N03S2L-04GSPB80N03S2L-05SPB80N03S2L-05GSPB80N03S2L05TSPB80N03S2L-06SPB80N03S2L-06GSPB80N03S2L06T
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<300 W<300 W<300 W<300 W<188 W<188 W<167 W<167 W<167 W<150 W<150 W<150 W
Input capacitance of field effect transistor
Ciss
7.02 nFVds = 25V7.02 nFVds = 25V8.18 nFVds = 25V8.18 nFVds = 25V3.9 nFVds = 25V3.9 nFVds = 25V3.32 nFVds = 25V3.32 nFVds = 25V3.32 nFVds = 25V2.53 nFVds = 25V2.53 nFVds = 25V2.53 nFVds = 25V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<80 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<3.1 mΩId, Vgs = 80A, 10V<3.1 mΩId, Vgs = 80A, 10V<2.8 mΩId, Vgs = 80A, 10V<2.8 mΩId, Vgs = 80A, 10V<3.9 mΩId, Vgs = 80A, 10V<3.9 mΩId, Vgs = 80A, 10V<4.9 mΩId, Vgs = 55A, 10V<4.9 mΩId, Vgs = 55A, 10V<4.9 mΩId, Vgs = 55A, 10V<5.9 mΩId, Vgs = 80A, 10V<5.9 mΩId, Vgs = 80A, 10V<5.9 mΩId, Vgs = 80A, 10V
MOSFET series
Series
OptiMOS™
Gate charge
QG
150 nCVgs = 10V150 nCVgs = 10V220 nCVgs = 10V220 nCVgs = 10V105 nCVgs = 10V105 nCVgs = 10V89.7 nCVgs = 10V89.7 nCVgs = 10V89.7 nCVgs = 10V68 nCVgs = 10V68 nCVgs = 10V68 nCVgs = 10V
FET Feature
FET Feature
StandardStandardLogic Level GateLogic Level GateLogic Level GateLogic Level GateLogic Level GateLogic Level GateLogic Level GateLogic Level GateLogic Level GateLogic Level Gate