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| Parameter | SPB21N10G | SPB21N10T | |
|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | |
Manufacturer | Manufacturer | Infineon Technologies | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <90 W | |
Input capacitance of field effect transistor | Ciss | 865 pFVds = 25V | |
Continuous voltage between drain and source | UDSS | <100 V | |
Continuous drain current | IDSS | <21 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <80 mΩId, Vgs = 15A, 10V | |
MOSFET series | Series | SIPMOS® | |
Gate charge | QG | 38.4 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |