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| Parameter | SPB10N10G | SPB10N10L | SPB10N10LG | |
|---|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | ||
Manufacturer | Manufacturer | Infineon Technologies | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <50 W | ||
Input capacitance of field effect transistor | Ciss | 426 pFVds = 25V | 444 pFVds = 25V | 444 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <100 V | ||
Continuous drain current | IDSS | <10.3 A | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <170 mΩId, Vgs = 7.8A, 10V | <154 mΩId, Vgs = 8.1A, 10V | <154 mΩId, Vgs = 8.1A, 10V |
MOSFET series | Series | SIPMOS® | ||
Gate charge | QG | 19.4 nCVgs = 10V | 22 nCVgs = 10V | 22 nCVgs = 10V |
FET Feature | FET Feature | Standard | Logic Level Gate | Logic Level Gate |