SPB100N03S2-03G

SPB100N03, SPB100N03S2-03, SPB100N03S2-03G, SPB100N03S203T, SPB100N03S2L-03, SPB100N03S2L-03G, SPB100N03S2L03T

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Description

Parameters

Parameter		SPB100N03S2-03	SPB100N03S2-03G	SPB100N03S203T	SPB100N03S2L-03	SPB100N03S2L-03G	SPB100N03S2L03T
IC package	Package	D²Pak, TO-263 (2 leads + tab)
Manufacturer	Manufacturer	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<300 W
Input capacitance of field effect transistor	C_iss	7.02 nFVds = 25V	7.02 nFVds = 25V	7.02 nFVds = 25V	8.18 nFVds = 25V	8.18 nFVds = 25V	8.18 nFVds = 25V
Continuous voltage between drain and source	U_DSS	<30 V
Continuous drain current	I_DSS	<100 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<3 mΩId, Vgs = 80A, 10V	<3 mΩId, Vgs = 80A, 10V	<3 mΩId, Vgs = 80A, 10V	<2.7 mΩId, Vgs = 80A, 10V	<2.7 mΩId, Vgs = 80A, 10V	<2.7 mΩId, Vgs = 80A, 10V
MOSFET series	Series	OptiMOS™
Gate charge	Q_G	150 nCVgs = 10V	150 nCVgs = 10V	150 nCVgs = 10V	220 nCVgs = 10V	220 nCVgs = 10V	220 nCVgs = 10V
FET Feature	FET Feature	Standard	Standard	Standard	Logic Level Gate	Logic Level Gate	Logic Level Gate