SPA11N60CFD

SPA11N60, SPA11N60C3, SPA11N60CFD

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Description

Parameters

ParameterSPA11N60C3SPA11N60CFD
IC package
Package
TO-220FPTO-220-3
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<33 W
Input capacitance of field effect transistor
Ciss
1.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<650 V<600 V
Continuous drain current
IDSS
<11 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<380 mΩId, Vgs = 7A, 10V<440 mΩId, Vgs = 7A, 10V
MOSFET series
Series
CoolMOS™
Gate charge
QG
60 nCVgs = 10V64 nCVgs = 10V
FET Feature
FET Feature
Standard