SPA02N80

SPA02N80, SPA02N80C3

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Description

Parameters

ParameterSPA02N80C3
IC package
Package
TO-220
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<42 W
Input capacitance of field effect transistor
Ciss
290 pFVds = 100V
Continuous voltage between drain and source
UDSS
<800 V
Continuous drain current
IDSS
<2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<2.7 ΩId, Vgs = 1.2A, 10V
MOSFET series
Series
CoolMOS™
Gate charge
QG
16 nCVgs = 10V
FET Feature
FET Feature
Standard