SIB417EDK-T1-GE3

SIB417, SIB417DK-T1-GE3, SIB417EDK-T1-GE3

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Description

Parameters

ParameterSIB417DK-T1-GE3SIB417EDK-T1-GE3
IC package
Package
PowerPAK® SC-75-6L
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<13 W
Input capacitance of field effect transistor
Ciss
675 pFVds = 4V565 pFVds = 4V
Continuous voltage between drain and source
UDSS
<8 V
Continuous drain current
IDSS
<9 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<52 mΩId, Vgs = 5.6A, 4.5V<58 mΩId, Vgs = 5.8A, 4.5V
Gate charge
QG
12.75 nCVgs = 5V12 nCVgs = 5V
FET Feature
FET Feature
Standard