SI9435DY

SI9435, SI9435BDY-T1-E3, SI9435DY

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Description

Parameters

ParameterSI9435BDY-T1-E3SI9435DY
IC package
Package
8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
Vishay/SiliconixFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.3 W<1 W
Input capacitance of field effect transistor
Ciss
(not set)690 pFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<4.1 A<5.3 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<42 mΩId, Vgs = 5.7A, 10V<50 mΩId, Vgs = 5.3A, 10V
MOSFET series
Series
TrenchFET®PowerTrench®
Gate charge
QG
24 nCVgs = 10V23 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate