SI9424DY

SI9424, SI9424BDY-T1-E3, SI9424DY

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Description

Parameters

ParameterSI9424BDY-T1-E3SI9424DY
IC package
Package
8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
Vishay/SiliconixFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.25 W<1 W
Input capacitance of field effect transistor
Ciss
(not set)2.26 nFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<5.6 A<8 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<25 mΩId, Vgs = 7.1A, 4.5V<24 mΩId, Vgs = 8A, 4.5V
MOSFET series
Series
TrenchFET®PowerTrench®
Gate charge
QG
40 nCVgs = 4.5V33 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate