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| Parameter | SI5857DU-T1-E3 | |
|---|---|---|
IC package | Package | PowerPAK® ChipFet Dual |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <10.4 W |
Input capacitance of field effect transistor | Ciss | 480 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <6 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <58 mΩId, Vgs = 3.6A, 4.5V |
Gate charge | QG | 17 nCVgs = 10V |
FET Feature | FET Feature | Diode (Isolated) |