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| Parameter | SI5435BDC-T1-E3 | SI5435BDC-T1-GE3 | |
|---|---|---|---|
IC package | Package | 1206-8 ChipFET™ | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <1.3 W | |
Continuous voltage between drain and source | UDSS | <30 V | |
Continuous drain current | IDSS | <4.3 A | |
FET channel type | Channel | P-ch | |
Channel resistance at ON state | RDS-ON | <45 mΩId, Vgs = 4.3A, 10V | |
MOSFET series | Series | TrenchFET® | (not set) |
Gate charge | QG | 24 nCVgs = 10V | |
FET Feature | FET Feature | Logic Level Gate | |