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| Parameter | SI5410DU-T1-GE3 | |
|---|---|---|
IC package | Package | PowerPAK® ChipFET Single |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <31 W |
Input capacitance of field effect transistor | Ciss | 1.35 nFVds = 20V |
Continuous voltage between drain and source | UDSS | <40 V |
Continuous drain current | IDSS | <12 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <18 mΩId, Vgs = 6.6A, 10V |
Gate charge | QG | 32 nCVgs = 10V |
FET Feature | FET Feature | Standard |