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| Parameter | SI4890BDY-T1-GE3 | SI4890DY-T1-E3 | |
|---|---|---|---|
IC package | Package | 8-SOIC (3.9mm Width) | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <5.7 W | <2.5 W |
Input capacitance of field effect transistor | Ciss | 1.535 nFVds = 15V | (not set) |
Continuous voltage between drain and source | UDSS | <30 V | |
Continuous drain current | IDSS | <16 A | <11 A |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <12 mΩId, Vgs = 10A, 10V | <12 mΩId, Vgs = 11A, 10V |
MOSFET series | Series | (not set) | TrenchFET® |
Gate charge | QG | 33 nCVgs = 10V | 20 nCVgs = 5V |
FET Feature | FET Feature | Standard | Logic Level Gate |