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| Parameter | SI4835BDY-T1-E3 | SI4835DDY-T1-GE3 | |
|---|---|---|---|
IC package | Package | 8-SOIC (3.9mm Width) | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <1.5 W | <5.6 W |
Input capacitance of field effect transistor | Ciss | (not set) | 1.96 nFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V | |
Continuous drain current | IDSS | <7.4 A | <13 A |
FET channel type | Channel | P-ch | |
Channel resistance at ON state | RDS-ON | <18 mΩId, Vgs = 9.6A, 10V | <18 mΩId, Vgs = 10A, 10V |
MOSFET series | Series | TrenchFET® | (not set) |
Gate charge | QG | 37 nCVgs = 5V | 65 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate | Standard |