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| Parameter | SI4833ADY-T1-E3 | |
|---|---|---|
IC package | Package | 8-SOIC (3.9mm Width) |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <2.75 W |
Input capacitance of field effect transistor | Ciss | 750 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <4.6 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <72 mΩId, Vgs = 3.6A, 10V |
Gate charge | QG | 15 nCVgs = 10V |
FET Feature | FET Feature | Diode (Isolated) |